unisonic technologies co., ltd ut6302 power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2012 unisonic technologies co., ltd qw-r502-363.e p-channel enhancement mosfet ? description the utc ut6302 is a power mosfet offering the customers efficient and reliable performance. the utc ut6302 is ideal for thin application environments, such as portable electronics and pcmcia cards. ? features * extremely-low on-resistance * fast switching speed ? symbol gate (2) source (1) drain (3) ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 ut6302l-ae2-r UT6302G-AE2-R sot-23-3 s g d tape reel ut6302l-ae3-r ut6302g-ae3-r sot-23 s g d tape reel ? marking
ut6302 power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-363.e ? absolute maximum ratings (t j = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss -20 v gate-source voltage v gss 12 v continuous drain current (v gs =-4.5v, ta=25c) i d -0.78 a pulsed drain current (note 2) i dm -4.9 a peak diode recovery dv/dt (note 3) dv/dt -5.0 v/ns power dissipation (t a =25c) p d 540 mw linear derating factor above 25c 4.3 mw /c junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: 1. 2. 3. absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. pulse width limited by t j(max) i sd -0.61a, di/dt 76a/s, v dd v ( br ) dss , t j =150c ? thermal data parameter symbol ratings unit junction to ambient ja 230 c/w note: surface mounted on fr-4 board, t 5sec. ? electrical characteristics (t j = 25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =-250 a -20 v drain-source leakage current i dss v ds =-16v,v gs =0v -1.0 a gate-source leakage current i gss v gs =12 v, v ds =0 v 100 na drain-source breakdown voltage bv dss / t j i d =-1ma, reference to 25c -4.9 mv/c on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =-250a -0.70 -1.5 v static drain-source on-resistance r ds(on) v gs =-4.5v, i d =-0.61a (note 2) 0.60 ? v gs =-2.7v, i d =-0.31a (note 2) 0.90 ? dynamic parameters input capacitance c iss v ds =-15v, v gs =0v, f=1.0mhz 97 pf output capacitance c oss 53 pf reverse transfer capacitance c rss 28 pf switching parameters total gate charge q g v gs =-4.5v, v ds =-16v i d =-0.61a (note 1, 2) 2.4 3.6 nc gate source charge q gs 0.56 0.84 nc gate drain charge q gd 1.0 1.5 nc turn-on delay time t d ( on ) v dd =-10v, i d =-0.61a, r g =6.2 ? , r d =16 ? (note 1, 2) 13 ns turn-on rise time t r 18 ns turn-off delay time t d ( off ) 22 ns turn-off fall-time t f 22 ns
ut6302 power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-363.e ? electrical characteristics (cont.) parameter symbol test conditions min typ max unit source-drain diode ratings and characteristics drain-source diode forward voltage v sd i s =-0.61a, v gs =0v -1.2 v maximum continuous drain-source diode forward current i s -0.54 a maximum pulsed drain-source diode forward current (note 1) i sm -4.9 a reverse recovery time t r r t j =25c ,i f =-0.61a, di/dt=100a/s (note 2) 35 53 ns reverse recovery charge q rr 26 39 nc notes: 1. repetitive rating; pulse width limited by t j ( max ) 2. pulse width 300 s, duty cycle 2%.
ut6302 power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-363.e ? test circuits and waveforms (3) + - d.u.t. - (2) + (1) r g (4) + - v gs (note 1) dv/dt controlled by r g i sd controlled by duty factor d d.u.t. C device under test + - v dd low stray inductance ground plane low leakage inductance current transformer circuit layout considerations (note 1) (note 2) peak diode recovery dv/dt test circuit i sd ripple 5 inductor current v dd body diode forward drop body recovery dv/dt d.u.t. v ds waveform (3) (4) re-applied voltage reverse recovery current (2) d.u.t. i sd waveform di/dt body diode forward current v gs =10v (note 3) (1) driver gate drive p.w. period d= period p.w. peak diode recovery dv/dt waveforms notes: 1. reverse polarity for p-channel 2. use p-channel driver for p-channel measurements 3. v gs =5.0v for logic level and 3v drive devices
ut6302 power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-363.e ? test circuits and waveforms(cont.) 50k ? 0.3f d.u.t. v ds same type as d.u.t. 0.2f 12v v gs -3ma i g i d - + current sampling resistors current regulator -4.5v charge q gs q gd q g v g gate charge test circui t gate charge waveforms v ds v gs 90% 10% t d(on) t r t f t d(off) switching time test circui t switching time waveforms
ut6302 power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-363.e ? typical characteristics drain current vs. drain-source breakdown voltage drain-source breakdown voltage, -bv dss (v) 200 0 drain current vs. gate threshold voltage gate threshold voltage, -v th (v) 600 800 1200 400 1000 0 50 100 150 200 250 300 010 30 4050 20 0 50 100 150 200 250 300 drain current, -i d (ma) drain current, -i d (ma) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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